The present paper gives an overview on the possible methods of seeding substrates for diamond layers growth. Diamond in reason of his properties is very desirable material in microelectronic, biomedical and waste treatment sensors. Microcrystalline diamond for these applications must be grown on silicon substrate in microwave plasma assisted chemical vapor deposition (MPACVD). To grow diamond on non-diamond surface pre-growth seeding of the substrate surface is necessary. For MPACVD growth exists several methods of silicon seeding. To find the most effective seeding technique for diamond nucleation mechanical scratching by diamond nanopowder, diamond slurry in water or methanol solution and bias enhanced nucleation (BEN) methods were compared. Microcrystaline thin diamond layers were grown on seeded surfaces in microwave plasma using hydrogen-methane gas mixture. Investigation of growth ration and layer composition was made by Raman spectroscopy and scanning electron microscopy (SEM). Thickness homogeneity of layer and also sp3/sp2 ratio was particularly studied. Results showed that most efficient seeding technique is sonication in nandodiamond powder solution combined with in situ BEN growth enhancement. It can be used in future to preapering good quality doped diamonds which can be used as a semiconductors.
Authors
Additional information
- Category
- Aktywność konferencyjna
- Type
- publikacja w wydawnictwie zbiorowym recenzowanym (także w materiałach konferencyjnych)
- Language
- angielski
- Publication year
- 2012
