A quasi-two-dimensional (quasi-2D) representation of the MOSFET channel is proposed in this work. The representation lays the foundations for a quasi 2D MOSFET model. The quasi 2D model is a result of a 2D into quasi 2D transformation. The basis for the transformation are an analysis of a current density vector field and such phenomena as Gradual Channel Detachment Effect (GCDE), Channel Thickness Modulation Effect (CTME), and Lengthening Channel Effect (LCE). Basic parameters and quantities necessary for deriving quasi-2D continuity equations, quasi-2D Poisson’s equation, quasi-2D transport equation, as well as development of quasi-2D dc and small-signal models are defined.
Authors
Additional information
- DOI
- Digital Object Identifier link open in new tab 10.15199/ele-2014-131
- Category
- Publikacja w czasopiśmie
- Type
- artykuły w czasopismach recenzowanych i innych wydawnictwach ciągłych
- Language
- angielski
- Publication year
- 2013
