Layered oxide Bi4O2O11 and mixed oxides of bismuth, vanadium and a third metal (ME = Cu, Zn, Mn) were synthesized and characterized using XRD, Raman and SEM. The energy band gap (Eg) of samples determined using UV–VIS reflectance spectra equals to 2.46, 2.34, 2.27 and 2.18 eV for Bi4V2O11, BICUVOX (Bi2V1 − xCuxO5.5 − 3x/2), BIZNVOX (Bi2V1 − xZnxO5.5 − 3x/2) and BIMNVOX (Bi2V1 − xMnxO5.5 − x/2) (x = 0.1), respectively. Open circuit voltage measurements confirmed the n-type semiconductor's activity for all the tested oxides. This work shows that all studied materials are active under UV and visible light illumination.
Authors
- dr inż. Konrad Trzciński link open in new tab ,
- Anna Borowska-Centkowska,
- M. Sawczak,
- prof. dr hab. Anna Lisowska-Oleksiak link open in new tab
Additional information
- DOI
- Digital Object Identifier link open in new tab 10.1016/j.ssi.2014.10.008
- Category
- Publikacja w czasopiśmie
- Type
- artykuł w czasopiśmie wyróżnionym w JCR
- Language
- angielski
- Publication year
- 2015
