A top-gated Graphene Field-Effect Transistor (GFET) suitable for electronic sensing applications was modelled. The applied simulation method reproduces correctly the output transfer GFET characteristics and allows to investigate doping effect caused by different physical, chemical or biological factors. The appearance of additional charge in the system results in the shift of the current-voltage characteristic. This feature could be employed to measure the external factor intensity.
Authors
Additional information
- DOI
- Digital Object Identifier link open in new tab 10.15199/48.2015.10.34
- Category
- Publikacja w czasopiśmie
- Type
- artykuły w czasopismach recenzowanych i innych wydawnictwach ciągłych
- Language
- angielski
- Publication year
- 2015
