The paper presents results on behavior modeling of general purpose Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) for simulation of power electronics systems requiring accuracy both in steady-state and in switching conditions. Methods of parameters extraction including nonlinearity of parasitic capacitances and steady-state characteristics are based on manufacturer data sheet and externally measurable characteristics. The MOSFET template is written in the MAST language and simulated in the SABER simulator. Experimental validation of the N-Channel Power MOSFET type IRFP240 (Fairchild Semiconductor) rated at 20A/200V is performed in a DC/DC boost converter. The main features of the developed model have been compared with properties of an analytical MOSFET model and a general MOSFET model embedded to SABER simulator.
Authors
- dr hab. inż. Marek Turzyński link open in new tab ,
- Wlodek Kulesza
Additional information
- DOI
- Digital Object Identifier link open in new tab 10.1109/tpel.2015.2445375
- Category
- Publikacja w czasopiśmie
- Type
- artykuł w czasopiśmie wyróżnionym w JCR
- Language
- angielski
- Publication year
- 2016
