In the paper ringing phenomena in a DC-DC boost converter is presented. The ringing frequency is calculated using an analytical formula. The necessary wide band models of MOSFET transistor, passive and parasitics are described. The calculation results are verified in simulation and laboratory tests.
Authors
Additional information
- Category
- Aktywność konferencyjna
- Type
- materiały konferencyjne indeksowane w Web of Science
- Language
- angielski
- Publication year
- 2016
