The growth of B-CNW with different boron doping levels controlled by the [B]/[C] ratio in plasma, and the influence of boron on the obtained material’s structure, surface morphology, electrical properties and electrochemical parameters, such as -ΔE and k°, were investigated. The fabricated boron-doped carbon nanowalls exhibit activity towards ferricyanide redox couple, reaching the peak separation value of only 85 mV. The flatband potential and the concentration of boron carriers were estimated in the B-CNW samples using the Mott-Schottky relationship. It was shown that the vertically oriented carbon planes are characterized by p-type conductivity and very high hole-acceptor concentration (3.33×1023 cm-3 for a highly doped sample), which provides high electrical conductivity. The enhanced electrochemical performance of B-CNWs electrodes is an advantageous feature that can be applied in ultrasensitive detection or energy storage devices.
Authors
- dr hab. inż. Michał Sobaszek link open in new tab ,
- Katarzyna Siuzdak link open in new tab ,
- dr hab. inż. Jacek Ryl link open in new tab ,
- Miroslaw Sawczak,
- Sanju Gupta,
- Sara Carrizosa,
- dr inż. Mateusz Ficek link open in new tab ,
- dr inż. Bartłomiej Dec link open in new tab ,
- prof. dr hab. inż. Kazimierz Darowicki link open in new tab ,
- dr hab. inż. Robert Bogdanowicz link open in new tab
Additional information
- DOI
- Digital Object Identifier link open in new tab 10.1021/acs.jpcc.7b06365
- Category
- Publikacja w czasopiśmie
- Type
- artykuł w czasopiśmie wyróżnionym w JCR
- Language
- angielski
- Publication year
- 2017
