The boron-doped diamond thin films were growth in deuterium rich microwave plasma in CVD process. The mechanism of influence of plasma composition on boron doping level was studied using optical emission spectroscopy. Deuterium rich plasma results in an increased dissociation of B2H6 precursor and intense boron-radicals' production. In consequence, a higher doping level of diamond films was observed by means of Laser Induced Breakdown Spectroscopy and Raman spectroscopy. Deuterium species modify the mechanism of boron incorporation into thin films leading to increased boron concentration. Lower concentrations of sp2 phases and CH defects have been noticed in the films deposited in the plasma with deuterium than with hydrogen. Moreover, all BHx (x = 0–3) species can bind to radical sites on the diamond {100} surface to form stable complexes. The enhanced boron doping is attributed to the lower energy of BH bond at the growth surface, when compared to CH bond. The hydrogen abstraction from BH site is providing dangling bond for diamond growth and boron incorporation. This effect plays a main role due to extended dissociation caused by deuterium rich plasma. The increase in the carrier concentration and the decrease in the Hall mobility for the BDD samples grown in deuterium was registered.
Authors
- dr hab. inż. Robert Bogdanowicz link open in new tab ,
- dr hab. inż. Michał Sobaszek link open in new tab ,
- dr hab. inż. Mirosław Sawczak,
- dr Galina Grigorian,
- dr inż. Mateusz Ficek link open in new tab ,
- dr Piotr Caban,
- dr hab. inż. Aleksander Herman link open in new tab ,
- Adam Cenian
Additional information
- DOI
- Digital Object Identifier link open in new tab 10.1016/j.diamond.2019.05.005
- Category
- Publikacja w czasopiśmie
- Type
- artykuł w czasopiśmie wyróżnionym w JCR
- Language
- angielski
- Publication year
- 2019
