Publications Repository - Gdańsk University of Technology

Interaction between 2, 3, 5 and 7 atomic layers of gold and a (111) silicon surface was investigated with the molecular dynamics simulation method. The simulation of the diffusion interaction between gold and silicon in the temperature range 425-925 K has been carried out. The peculiarities of the concentration changes of the interacting components and the atomic density at the boundary of two phases in the direction perpendicular to the crystalline surface were established. By means the formalism of quasi two dimensional partial pair correlation functions the atomic structure of the diffusion region was analyzed. The formation of the alloy of eutectic composition within the gold-silicon interlayer was established. It was shown that the inter-phase mixing in various temperature intervals occurred according to different diffusion mechanisms

Authors

• Valeriy Plechystyy link open in new tab ,
• Ihor Shtablavyi,
• dr inż. Szymon Winczewski link open in new tab ,
• Kamil Rybacki link open in new tab ,
• Stepan Mudry,
• prof. dr hab. inż. Jarosław Rybicki link open in new tab