Two issues need to be resolved when fabricating p–i–n semitransparent perovskite solar cells (ST-PVSCs) for four-terminal (4 T) perovskite/silicon tandem solar cells: 1) damage to the underlying absorber (MAPbI3), electron transporting layer ([6,6]-phenyl-C61-butyric acid methyl ester, PCBM), and work function (WF) modifier (polyethylenimine, PEI), resulting from the harsh sputtering conditions for the transparent electrodes (TEs) and 2) low average near-infrared transmittance (ANT) of TEs. Herein, a unique SnO2 layer to protect the MAPbI3 and PCBM layers is developed and functions as a WF modifier for a new TE (cerium-doped indium oxide, ICO), which exhibits an excellent ANT of 86.7% in the range of 800−1200 nm. Moreover, a MAPbI3-based p–i–n ST-PVSC is prepared, achieving an excellent power conversion efficiency (PCE) of 17.23%. When it is placed over the Si solar cell, a 4 T tandem solar cell with a PCE of 26.14% is obtained.
Authors
- Pei-Huan Lee,
- Ting-Tzu Wu,
- Chia-Feng Li,
- dr inż. Damian Głowienka link open in new tab ,
- Yu-Xuan Huang,
- Shih-Han Huang,
- Yu-Ching Huang,
- Wei-Fang Su
Additional information
- DOI
- Digital Object Identifier link open in new tab 10.1002/solr.202100891
- Category
- Publikacja w czasopiśmie
- Type
- artykuły w czasopismach
- Language
- angielski
- Publication year
- 2022
