The gas sensing properties of graphene back-gated field-effect transistor (GFET) sensors toward acetonitrile, tetrahydrofuran, and chloroform vapors were investigated with the focus on unfolding possible gas detection mechanisms. The FET configuration of the sensor device enabled gate voltage tuning for enhanced measurements of changes in DC electrical characteristics. Electrical measurements were combined with a fluctuation-enhanced sensing methodology and intermittent UV irradiation. Distinctly different features in 1/f noise spectra for the organic gases measured under UV irradiation and in the dark were observed. The most intense response observed for tetrahydrofuran prompted the decomposition of the DC characteristic, revealing the photoconductive and photogating effect occurring in the graphene channel with the dominance of the latter. Our observations shed light on understanding surface processes at the interface between graphene and volatile organic compounds for graphene-based sensors in ambient conditions that yield enhanced sensitivity and selectivity.
Authors
- mgr inż. Katarzyna Drozdowska link open in new tab ,
- Adil Rehman,
- Pavlo Sai,
- Bartłomiej Stonio,
- Aleksandra Krajewska,
- Maksym Dub,
- Jacek Kacperski,
- Grzegorz Cywiński,
- Maciej Haras,
- Sergey Rumyantsev,
- Lars Österlund,
- prof. dr hab. inż. Janusz Smulko link open in new tab ,
- dr inż. Andrzej Kwiatkowski link open in new tab
Additional information
- DOI
- Digital Object Identifier link open in new tab 10.1021/acssensors.2c01511
- Category
- Publikacja w czasopiśmie
- Type
- artykuły w czasopismach
- Language
- angielski
- Publication year
- 2022
