This work introduces a novel, scalable methodology for rapidly fabricating sulfur-doped laser-induced graphene with enhanced porosity and wetting characteristics, targeting advanced supercapacitor applications. An infrared laser scribing technique was employed to create a three-dimensional porous graphene network, with in-situ sulfur doping achieved through physical evaporation using powder precursor. A second-pass laser process ensured uniform sulfur integration and optimized graphene structure. Sulfur incorporation facilitated the formation of a hierarchical porous network, significantly improving hydrophilicity and surface chemistry. This modification enhanced ion transport and charge storage mechanisms through synergistic double-layer and pseudo-capacitance effects. Physicochemical characterization revealed a dramatically increased ID/IG ratio post-sulfur doping and plasma treatment, indicating increased crystal plane defects and promising capacitive properties. Systematic optimization of sulfur loading, synthesis temperature, and electrolyte composition yielded remarkable electrochemical performance. The optimized S-doped electrodes achieved a high areal capacitance of 30.18 mF/cm² at 0.08 mA/cm² using a PVA/H₂SO₄ gel electrolyte. Notably, the developed supercapacitors demonstrated mechanical flexibility, maintaining 84.7% of their initial capacitance after 5000 cycles, highlighting the potential for scalable, flexible energy storage technologies.
Authors
Additional information
- DOI
- Digital Object Identifier link open in new tab 10.1016/j.apsusc.2025.162478
- Category
- Publikacja w czasopiśmie
- Type
- artykuły w czasopismach dostępnych w wersji elektronicznej [także online]
- Language
- angielski
- Publication year
- 2025
