Repozytorium publikacji - Politechnika Gdańska

A new method of detection and measurement with sub-nanometer resolution of layers adsorbed or bonded to the ISFET's gate dielectric was presented. The sensitivity of this method is high enough to detect even partial mono-layer covering. The transconductance measurement of the ISFET provides independence of the output signal from pH changes and the driving electrode electrochemical potential instabilities. The stable reference electrode is not necessary to detect layers of various species on the sub mono-molecular scale.

Autorzy

• dr inż. Maciej Kokot link otwiera się w nowej karcie