We report the optical and electrical band gap energy of amorphous hydrogenated carbon nitride (a-HCNx) and carbon nitride (a-CNx) as a function of nitrogen concentration (N/C). The optical band gap of a-HCNx and a-CNx films has been determined by means of Ellipsometry and UV-VIS. Both optical and electrical band gaps increase with elevated nitrogen concentration. Experimentally obtained electrical band gap is compared with the same one calculated from single particle band gap or carbon nanotube model to observe the dependence like behavior. Moreover, resistivity of the a-HCNx film shows a higher value in comparison to that of the a-CNx film as the nitrogen concentration increases from 0.07 to .54 at room temperature.
Autorzy
- Abhijit Majumdar,
- dr hab. inż. Robert Bogdanowicz link otwiera się w nowej karcie ,
- Subrata Mukherjee,
- Rainer Hippler
Informacje dodatkowe
- DOI
- Cyfrowy identyfikator dokumentu elektronicznego link otwiera się w nowej karcie 10.1016/j.tsf.2012.11.020
- Kategoria
- Publikacja w czasopiśmie
- Typ
- artykuł w czasopiśmie wyróżnionym w JCR
- Język
- angielski
- Rok wydania
- 2013
