Repozytorium publikacji - Politechnika Gdańska

Few-nanometer-thick very highly boron-doped p-type layers were fabricated at metal-semiconductor interfaces of Schottky barrier diodes formed with aluminum on polycrystalline diamond. Preliminary results show that hermionically-assisted tunneling mechanism results in lower voltage drops at forward biasing of these diodes than expected for the Al-diamond metal-semiconductor potential barrier B. The effective barrier height Bpeff can be engineered with changing the thickness of the boron-doped layer grown in a process of microwave plasma enhanced chemical vapor deposition (MPECVD) at the top of the diamond layer.

Autorzy

• mgr inż. Krzysztof Zwolski link otwiera się w nowej karcie