Repozytorium publikacji - Politechnika Gdańska

One of the method of electronic device quality and reliability evaluation is observation of its inherent noise. The RTS phenomena usually indicates the presence of large defects in the structure of the material of the device, therefore it can be treated as an indicator of technology quality. In the paper authors present results of RTS investigations in reverse polarized Silicon Carbide Schottky diodes. Devices being studied are commercially available diodes with reverse voltage UR = 600 V. The RTS was observed during device stress by applying high voltage for several minutes and the change in signal parameters were studied.

Autorzy

• dr inż. Arkadiusz Szewczyk link otwiera się w nowej karcie ,
• dr inż. Barbara Stawarz-Graczyk link otwiera się w nowej karcie