Repozytorium publikacji - Politechnika Gdańska

A novel method for thermoelectric materials fabrication using a reduction of oxide precursors in hydrogen was reported. On the example of Bi-Sb, Bi-Sb-Te and Te-Ag-Ge-Sb compounds it was shown that this simple and easy method is suitable for fabrication of two-, three- and even multicomponent thermoelectric materials. It allows controlling a composition, microstructure and even type a of electrical charge carriers. As a result of reduction of oxide precursors a layered structure with an average thickness of layers equal tens of nanometers was formed. At the near-room temperature the best material with a figure of merit (ZT) close to 0.4 was Bi0.8Sb1.2Te3Ox reduced at 340 °C for 10 hours. At 350 °C a value of ZT=0.8 was reached by the (GeTe)0.85(AgSbTe2)0.15 (TAGS85) sample reduced twice at 400 °C for 10h.

Autorzy

• dr hab. inż. Beata Bochentyn link otwiera się w nowej karcie ,
• dr hab. inż. Jakub Karczewski link otwiera się w nowej karcie ,
• dr inż. Tadeusz Miruszewski link otwiera się w nowej karcie ,
• prof. dr hab. inż. Bogusław Kusz link otwiera się w nowej karcie