Repozytorium publikacji - Politechnika Gdańska

Semiconductor power devices made from silicon carbide (SiC) reached a level of technology enabling their widespread use in power converters. Two different approaches to implementation of modern traction converters in electric multiple units (EMU) have been presented in recent years: (i) 3.3-kV SiC MOSFET-based three-level PWM inverter with regenerative braking and (ii) 6.5-kV IGBT-based four-quadrant power electronic traction transformer (PETT). The former has successfully reached optimized dimensions and efficiency but still requires a bulky line frequency transformer for multisystem applications. The latter characterizes inherent galvanic isolation from AC traction, which is realized by cascaded system of power electronic cells containing medium frequency transformers (MFT). The downsizing of the 6.5-kV IGBT-based cells is, however, problematic. The present paper proposes a different approach, that involves the use of a fast switching 1.2-kV SiC MOSFETS. The SiC-based PETT proposed in the paper is dedicated first for the DC traction. For multi-system application the input voltage of the proposed PETT can be adjusted using weight-optimized adjusting atotransformer. Thanks to utilization of fast-switching SiC- based power modules the weight and size of the power electronic cells can be optimized in a convenient way.

Autorzy

• dr hab. inż. Marek Adamowicz link otwiera się w nowej karcie ,
• prof. dr hab. inż. Zbigniew Krzemiński link otwiera się w nowej karcie ,
• mgr inż Paweł Stec