Repozytorium publikacji - Politechnika Gdańska

The improvement of the gate driver for GaN transistor is presented in this paper. The proposed topology contains the overcurrent protectionwith the two-stage turning off and independent control of turn on and off time of the GaN transistor. The operation of driver and its application in thehalf-bridge converter are described using both simulation and prototype measurements. The overcurrent protection was tested in Double Pulse Test(DPT) conditions.

Autorzy

• Paweł Derkacz link otwiera się w nowej karcie ,
• dr hab. inż. Piotr Musznicki link otwiera się w nowej karcie