In this work, nanocrystalline layers based on the Pr, Gd co-doped CeO2 were investigated. For the preparation of thin layers, lowtemperature spray pyrolysis technique was used. Different stoichiometries of the layers were produced for comparison on polished sapphire substrates. The microstructure of the prepared thin layers was studied by scanning electron microscopy (SEM), energydispersive X-ray spectroscopy (EDS) and X-ray diffractometry (XRD). The total electrical conductivity as a function of Gd or Pr dopant were determined by DC electrical measurements using the Van der Pauw method in air atmosphere. The oxygen electrode interface analysis confirm protective character of the diffusion barrier layer based on doped CeO2.
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Informacje dodatkowe
- DOI
- Cyfrowy identyfikator dokumentu elektronicznego link otwiera się w nowej karcie 10.1149/09101.1165ecst
- Kategoria
- Publikacja w czasopiśmie
- Typ
- artykuły w czasopismach
- Język
- angielski
- Rok wydania
- 2019