A promising solution for inductive power transfer and wireless charging is presented on the basis of a single-phase three-level T-type Neutral Point Clamped GaN-based inverter with two coupled transmitting coils. The article focuses on the feasibility study of GaN transistor application in the wireless power transfer system based on the T-type inverter on the primary side. An analysis of power losses in the main components of the system is performed: semiconductors and magnetic elements. System modeling was performed using Power Electronics Simulation Software (PSIM). It is shown that the main losses of the system are static losses in the filter inductor and rectifier diodes on the secondary side, while GaN transistors can be successfully used for the wireless power transfer system. The main features of the Printed Circuit Board (PCB) design of GaN transistors are considered in advance
Autorzy
- Viktor Shevchenko,
- Bohdan Pakhaliuk link otwiera się w nowej karcie ,
- Oleksandr Husev,
- Oleksandr Veligorskyi,
- Deniss Stepins,
- prof. dr hab. inż. Ryszard Strzelecki link otwiera się w nowej karcie
Informacje dodatkowe
- DOI
- Cyfrowy identyfikator dokumentu elektronicznego link otwiera się w nowej karcie 10.3390/en13174535
- Kategoria
- Publikacja w czasopiśmie
- Typ
- artykuły w czasopismach
- Język
- angielski
- Rok wydania
- 2020