A novel concept of the drain separation design in a horizontally-split-drain GaAs MAGFET sensor, based on epitaxial layer growth, was developed. Proper choice of GaAs/AlAs/GaAs epitaxial layer sequence provided good electrical isolation between the drain regions. The measured leakage current between the drain regions was in the range of nA for up to 2V drain voltage bias difference. Performed analytical and numerical calculations allow us to expect much better magnetic field sensitivity from this type of MAGFET sensors.
Authors
- dr hab. inż. Wiesław Kordalski link open in new tab ,
- Bogusław Boratyński,
- Marek Panek,
- Beata Ściana,
- Iwona Zborowska-Lindert,
- Marek Tłaczała
Additional information
- Category
- Aktywność konferencyjna
- Type
- publikacja w wydawnictwie zbiorowym recenzowanym (także w materiałach konferencyjnych)
- Language
- angielski
- Publication year
- 2007
Source: MOSTWiedzy.pl - publication "Magnetic field microsensor based on GaAs MESFET" link open in new tab
