Repozytorium publikacji - Politechnika Gdańska

A novel concept of the drain separation design in a horizontally-split-drain GaAs MAGFET sensor, based on epitaxial layer growth, was developed. Proper choice of GaAs/AlAs/GaAs epitaxial layer sequence provided good electrical isolation between the drain regions. The measured leakage current between the drain regions was in the range of nA for up to 2V drain voltage bias difference. Performed analytical and numerical calculations allow us to expect much better magnetic field sensitivity from this type of MAGFET sensors.

Autorzy

• dr hab. inż. Wiesław Kordalski link otwiera się w nowej karcie ,
• Bogusław Boratyński,
• Marek Panek,
• Beata Ściana,
• Iwona Zborowska-Lindert,
• Marek Tłaczała