Transport and noise properties of silicon solar cells in darkness and under illumination have been studied. The measurements were carried out for both reverse and forward bias of the device. The changes in the sample behaviour are due to the variation of PN junction dynamic resistance and, also, the occurence of both 1/f and generation-recombination noise components
Authors
- Jiri Vanek,
- Zdenek Chobola,
- dr inż. Lech Hasse link open in new tab
Additional information
- Category
- Publikacja w czasopiśmie
- Type
- artykuły w czasopismach recenzowanych i innych wydawnictwach ciągłych
- Language
- angielski
- Publication year
- 2004
