In the paper, a novel, improved method of the IGBT junction temperature computations in the PLECS simulation software is presented. The developed method aims at accuracy of the junction temperature computations in PLECS by utilising a more sophisticated model of transistor losses, and by taking into account variability of transistor thermal resistance as a function of its temperature. A detailed description of the proposed method, as well as the parameter estimation procedure is given. The method is verified experimentally for the case of a DC-DC boost converter. Any discrepancies between simulations and measurements are discussed in detail. The proposed method is well suited for accurate electrothermal circuit-level simulations of power electronics converters.
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Informacje dodatkowe
- DOI
- Cyfrowy identyfikator dokumentu elektronicznego link otwiera się w nowej karcie 10.1109/tie.2022.3189102
- Kategoria
- Publikacja w czasopiśmie
- Typ
- artykuły w czasopismach
- Język
- angielski
- Rok wydania
- 2023