In the paper, a novel, improved method of the IGBT junction temperature computations in the PLECS simulation software is presented. The developed method aims at accuracy of the junction temperature computations in PLECS by utilising a more sophisticated model of transistor losses, and by taking into account variability of transistor thermal resistance as a function of its temperature. A detailed description of the proposed method, as well as the parameter estimation procedure is given. The method is verified experimentally for the case of a DC-DC boost converter. Any discrepancies between simulations and measurements are discussed in detail. The proposed method is well suited for accurate electrothermal circuit-level simulations of power electronics converters.
Authors
- Pawel Gorecki,
- dr hab. inż. Daniel Wojciechowski link open in new tab
Additional information
- DOI
- Digital Object Identifier link open in new tab 10.1109/tie.2022.3189102
- Category
- Publikacja w czasopiśmie
- Type
- artykuły w czasopismach
- Language
- angielski
- Publication year
- 2023
